Optical studies of the internal electric field distributions, crystal defects, and detector performance of CdZnTe radiation detectors

H. Walter Yao; Ralph B. James; Edwin Y. Lee; Richard W. Olsen; Haim Hermon; Robert J. Anderson

doi:10.1117/12.312889

1 July 1998 Optical studies of the internal electric field distributions, crystal defects, and detector performance of CdZnTe radiation detectors

H. Walter Yao, Ralph B. James, Edwin Y. Lee, Richard W. Olsen, Haim Hermon, Robert J. Anderson

Author Affiliations +

Proceedings Volume 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications; (1998) https://doi.org/10.1117/12.312889
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Polarized transmission optical profiles were employed to characterize the CdZnTe (CZT) room-temperature radiation detectors. 2D images reflecting the internal electric field intensity changes were obtained utilizing the Pockels electro-optic effect. Varieties of different types of CZT detectors, i.e., planar and P-I-N detectors, were investigated under different operating bias voltages, respectively. Single crystal and polycrystalline CZT detectors were also studied and compared. Nonuniform internal electric field distributions throughout the detector volumes were observed and analyzed. The grain- boundary effects to the internal electric fields will be presented and discussed, along with a theoretical simulation. A semiconductor energy band model associated with depletion layer width will be emphasized and discussed.

Citation Download Citation

H. Walter Yao, Ralph B. James, Edwin Y. Lee, Richard W. Olsen, Haim Hermon, and Robert J. Anderson "Optical studies of the internal electric field distributions, crystal defects, and detector performance of CdZnTe radiation detectors", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); https://doi.org/10.1117/12.312889

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