Measurement of the electrical resistance of aluminum samples by holographic interferometry

Khaled J. Habib

doi:10.1117/12.316464

6 July 1998 Measurement of the electrical resistance of aluminum samples by holographic interferometry

Khaled J. Habib

Proceedings Volume 3479, Laser Interferometry IX: Applications; (1998) https://doi.org/10.1117/12.316464
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

In the present investigation, holographic interferometry was utilized for the first time to measure the electrical resistance of aluminum samples during the initial stage of anodization processes in aqueous solution without any physical contact. The anodization process (oxidation) of the aluminum samples was carried out chemically in different sulpheric acid concentrations (0.5 - 3.125% H2SO4) at room temperature. In the mean time, a method of holographic interferometric was used to measure the thickness of anodization (oxide film) of the aluminum samples in aqueous solutions. Along with the holographic measurement, a mathematical model was derived in order to correlate the electrical resistance of the aluminum samples in solutions to the thickness of the oxide film of the aluminum samples which forms due to the chemical oxidation. The thickness of the oxide film of the aluminum samples was measured by the real time-holographic interferometry. Consequently, holographic interferometric is found very useful for surface finish industries especially for monitoring the early stage of anodization processes of metals, in which the thickness of the anodized film as well as the electrical resistance of the aluminum samples can be determined in situ. In addition, a comparison was made between the electrical resistance values obtained from the holographic interferometry measurements and from measurements of electrochemical impedance spectroscopy. The comparison indicates that there is good agreement between the data from both techniques, especially when an electromagnetic coefficient was introduced to make the values of the electrical resistance from both technique are nearly the same.

Citation Download Citation

Khaled J. Habib "Measurement of the electrical resistance of aluminum samples by holographic interferometry", Proc. SPIE 3479, Laser Interferometry IX: Applications, (6 July 1998); https://doi.org/10.1117/12.316464

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