Paper
4 September 1998 Equipment challenges for a total material system change: enabling device manufacturing at 130 nm and below
Alain S. Harrus, John Kelly, Ronald A. Powell
Author Affiliations +
Abstract
ULSI circuit performance is constantly increasing, in speed, functionality and device density. This performance increase is supported by the constant development of new processes and new materials, on new equipment platforms, which support the demand for improved defect density and throughput. A key challenge for equipment infrastructure to continue to support this performance acceleration is the shortening of cycle time for equipment development and new material acceptance.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alain S. Harrus, John Kelly, and Ronald A. Powell "Equipment challenges for a total material system change: enabling device manufacturing at 130 nm and below", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324037
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KEYWORDS
Copper

Manufacturing

Materials processing

Dielectrics

Semiconductors

Very large scale integration

Chemical vapor deposition

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