Paper
27 August 1998 Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques
Hirofumi Shimizu, Chusuke Munakata
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Abstract
An ac surface photovoltage, which is excited by a chopped photon beam in a semiconductor, is successfully applied for nondestructive detection of metallic contaminants on silicon wafer surfaces. In this report, the charge-induced phenomena at Si wafer surfaces due to various impurities and the mechanism are summarized. Metal (trivalent Al and Fe)- induced negative charges have been proposed at the top region of thermal oxide on the basis of the generally accepted oxide charge model.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hirofumi Shimizu and Chusuke Munakata "Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324397
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KEYWORDS
Semiconducting wafers

Oxides

Silicon

Aluminum

Iron

Ions

Copper

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