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An ac surface photovoltage, which is excited by a chopped photon beam in a semiconductor, is successfully applied for nondestructive detection of metallic contaminants on silicon wafer surfaces. In this report, the charge-induced phenomena at Si wafer surfaces due to various impurities and the mechanism are summarized. Metal (trivalent Al and Fe)- induced negative charges have been proposed at the top region of thermal oxide on the basis of the generally accepted oxide charge model.
Hirofumi Shimizu andChusuke Munakata
"Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324397
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Hirofumi Shimizu, Chusuke Munakata, "Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques," Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324397