Pulsed-laser deposition of high-purity TiN thin films

Huidong Gu; Kang Ming Leung; Jonathan Chi Yuen Chung; X. D. Han

doi:10.1117/12.317945

15 August 1998 Pulsed-laser deposition of high-purity TiN thin films

Huidong Gu, Kang Ming Leung, Jonathan Chi Yuen Chung, X. D. Han

Proceedings Volume 3550, Laser Processing of Materials and Industrial Applications II; (1998) https://doi.org/10.1117/12.317945
Event: Photonics China '98, 1998, Beijing, China

Abstract

TiN thin films were deposited on glass substrates by KrF excimer laser ablation of Ti in very broad N₂ pressure range with different target-substrate distance at room temperature. The as-deposited TiN thin films were analyzed by x-ray diffraction and transmission electron microscopy. It is found that normally the as-deposited thin films are the mixture of TiN and Ti and the ratio of TiN to Ti of the as- deposited thin film depends on both the N₂ pressure and the target-substrate distance. The high purity TiN thin films can be obtained only in a very narrow deposition parameter range. A compound parameter (the product of the N₂ pressure and the target-substrate distance) is proposed to optimize deposition for high purity TiN thin films and the possible mechanism is also discussed. It is also revealed that the as-deposited TiN thin films were polycrystalline with an average grain size about 20 nm.

Citation Download Citation

Huidong Gu, Kang Ming Leung, Jonathan Chi Yuen Chung, and X. D. Han "Pulsed-laser deposition of high-purity TiN thin films", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); https://doi.org/10.1117/12.317945

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