Laser-induced modifications of binary Co-Si and ternary Co-Ti-Si films

Maris Knite; Valentinas J. Snitka; Arthur Medvids

doi:10.1117/12.347651

7 May 1999 Laser-induced modifications of binary Co-Si and ternary Co-Ti-Si films

Maris Knite, Valentinas J. Snitka, Arthur Medvids

Proceedings Volume 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications; (1999) https://doi.org/10.1117/12.347651
Event: 10th International School on Quantum Electronics: Lasers: Physics and Applications, 1998, Varna, Bulgaria

Abstract

Formation of clusters of vacancies in crystalline CoSi₂ has been attained by Q-switched YAG:Nd laser. The X-ray diffraction, atomic force microscopy and electrical resistance measurements, and infrared reflection spectra give evidence of formation of Si vacancies. By laser treatment with intensity ranging from 20 to 50 MW/cm² in air the magnitude of the resistance of the CoSi₂ layer increases approximately by a factor of three, in liquid nitrogen medium approximately by a factor of five. The second task of the present study has been to use the pulsed laser treatment of approach as much as possible the zero value of thermal coefficient of resistivity (TCR) of a Co- Ti-Si layer. The TCR of a Co-Ti-Si layer subject to previous treatment for 30 min at 460 degree(s)C becomes smaller than 10^-5 K^-1 after irradiation of nine 150 ns CO₂ laser pulses of the intensity I equals 1 MW/cm².

Citation Download Citation

Maris Knite, Valentinas J. Snitka, and Arthur Medvids "Laser-induced modifications of binary Co-Si and ternary Co-Ti-Si films", Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); https://doi.org/10.1117/12.347651

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