Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells

Milan Pophristic; Frederick H. Long; Chuong A. Tran; Ian T. Ferguson; Robert F. Karlicek Jr.

doi:10.1117/12.344489

14 April 1999 Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells

Milan Pophristic, Frederick H. Long, Chuong A. Tran, Ian T. Ferguson, Robert F. Karlicek Jr.

Author Affiliations +

Proceedings Volume 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III; (1999) https://doi.org/10.1117/12.344489
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We have used time-resolved photoluminescence (PL) to examine light-emitting diodes made of InGaN/GaN multiple quantum wells (MQWs) before the final stages of processing. The time-resolved photoluminescence from a dim MQW was quenched by nonradiative recombination centers. The PL kinetics from a bright MQW were not single exponential but stretched exponential, with the stretch parameter (beta) equals 0.59 +/- 0.05. The emission lifetime varied with energy, within error (beta) was independent of the emission energy. The stretched exponential kinetics are consistent with significant disorder in the material. Related results for an InGaN film and InGaN/GaN MQWs are also reported. We attribute the disorder to fluctuations of the local indium concentration.

Citation Download Citation

Milan Pophristic, Frederick H. Long, Chuong A. Tran, Ian T. Ferguson, and Robert F. Karlicek Jr. "Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344489

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