Paper
24 May 1999 Decay of the longitudinal optical phonons in wurtzite GaN
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Abstract
Decay of the longitudinal optical (LO) phonons in wurtzite GaN has been studied by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves for wurtzite GaN.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kong-Thon F. Tsen, David K. Ferry, A. Salvador, and Hadis Morkoc "Decay of the longitudinal optical phonons in wurtzite GaN", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349302
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KEYWORDS
Phonons

Gallium nitride

Raman spectroscopy

Semiconductors

Wafer-level optics

Electrical engineering

Picosecond phenomena

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