150-nm generation lithography equipment

Nobuyoshi Deguchi; Shigeyuki Uzawa

doi:10.1117/12.354359

26 July 1999 150-nm generation lithography equipment

Nobuyoshi Deguchi, Shigeyuki Uzawa

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354359
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Lithography by step-and-scan exposure is expected to be the mainstream for semiconductor manufacturing below 180 nm resolution patterns. We have developed a scanner for 150 nm features on either 200 mm or 300 mm wafers. For this system, the synchronous stage system has been redesigned which makes it possible to improve imaging performance and overlay accuracy. A new 300 mm wafer stage enhances productivity while weighting almost the same as the stage for 200 mm wafers. The mainbody mechanical frame incorporates reactive force receiver system to counter the inertial energy and vibrational issues associated with high speed wafer and reticle stage scanning. This report outlines the total system design, new technologies and performance data of the Cannon FPA-5000ES2 step-and-scan exposure tool developed for the 150 nm generation lithography.

Citation Download Citation

Nobuyoshi Deguchi and Shigeyuki Uzawa "150-nm generation lithography equipment", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354359

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