Design of illumination aperture for ArF exposure system with wide exposing latitude

Sang-Soo Choi; Han-Sun Cha; Jong-Soo Kim; Kag Hyeon Lee; Dohoon Kim; Hai Bin Chung; Dae Yong Kim

doi:10.1117/12.354397

26 July 1999 Design of illumination aperture for ArF exposure system with wide exposing latitude

Sang-Soo Choi, Han-Sun Cha, Jong-Soo Kim, Kag Hyeon Lee, Dohoon Kim, Hai Bin Chung, Dae Yong Kim

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354397
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

We report on the optimum design of illumination aperture with high throughput on ArF exposure system. The quadrupole illumination in the modified illumination methods has a problem to decrease throughput due to the shortage of transmission light passing the pole of the aperture comparing with the conventional illumination. In this paper, we suggest the new quadrupole structure to define 0.15micrometers line and space patterns with high throughput on the ArF exposure system with 0.55 NA.

Citation Download Citation

Sang-Soo Choi, Han-Sun Cha, Jong-Soo Kim, Kag Hyeon Lee, Dohoon Kim, Hai Bin Chung, and Dae Yong Kim "Design of illumination aperture for ArF exposure system with wide exposing latitude", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354397

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