New trends in Brunner's relation: dielectric levels

Yorick Trouiller; Anne Didiergeorges; Gilles L. Fanget; Cyrille Laviron; Corinne Comboure; Yves Quere

doi:10.1117/12.354407

26 July 1999 New trends in Brunner's relation: dielectric levels

Yorick Trouiller, Anne Didiergeorges, Gilles L. Fanget, Cyrille Laviron, Corinne Comboure, Yves Quere

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354407
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The goal of this paper is to understand the optical phenomena at dielectric levels. The purpose is also to quantify the impact of dielectric and resist thickness variations on the CD range with and without Bottom Anti Reflective COating (BARC). First we will show how all dielectric levels can be reduced to the stack metal/oxide/BARC/resist, and what are the contributions to resists and dielectric thickness range for each levels. Then a simple model will be developed to understand CD variation in this tack: by extending the Perot/Fabry model to the dielectric levels, developed by Brunner for the gate level, we can obtain a simple relation between the CD variation and all parameters. Experimentally CD variation for Damascene line level on 0.18micrometers technology has been measured depending on oxide thickness and resist thickness and can confirm this model. UV5 resist, AR2 BARC from Shipley and Top ARC from JSR have been used for these experiments. The main conclusions are: (1) Depending on your dielectric deposition and CMP processes, if resist thickness is controlled, a standard BARC process used for the gate is adapted to remove oxide thickness variation influence providing the optimized resist thickness is used. (2) If both resist thickness and dielectric thickness are uncontrolled, a more absorbent BARC is required.

Citation Download Citation

Yorick Trouiller, Anne Didiergeorges, Gilles L. Fanget, Cyrille Laviron, Corinne Comboure, and Yves Quere "New trends in Brunner's relation: dielectric levels", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354407

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available