Influence of gamma irradiation on the performance of HgCdTe photovoltaic devices

Xinwen Hu; Ke-Xue Zhu; Xiangyang Li; Jiaxiong Fang

doi:10.1117/12.354496

26 July 1999 Influence of gamma irradiation on the performance of HgCdTe photovoltaic devices

Xinwen Hu, Ke-Xue Zhu, Xiangyang Li, Jiaxiong Fang

Proceedings Volume 3698, Infrared Technology and Applications XXV; (1999) https://doi.org/10.1117/12.354496
Event: AeroSense '99, 1999, Orlando, FL, United States

Abstract

The 1-3 micrometers short wave IR detector has many applications in astronomy, optical radar and optical communications. The devices applied in air will inevitably influenced by all kinds of particle irradiation. So it is very important to study the influence of irradiation to the device performance. In this paper HgCdTe photovoltaic devices with different wavelengths were irradiated by gamma rays under different doses. The changes of their response spectrum, I-V characteristics, photo signal, noise, responsivity and detectivity were studied. It is observed that there is no noticeable change in the peak and cut-off wavelength after 22.7Mrad gamma irradiation, but the responsivity and detectivity decreased within a large extent. The results were analyzed at last.

Citation Download Citation

Xinwen Hu, Ke-Xue Zhu, Xiangyang Li, and Jiaxiong Fang "Influence of gamma irradiation on the performance of HgCdTe photovoltaic devices", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354496

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