Estimation of doping limit of some elements in GaSb single crystals

Vera Sestakova; Bedrich Stepanek; Jaroslav Sestak

doi:10.1117/12.342976

24 March 1999 Estimation of doping limit of some elements in GaSb single crystals

Vera Sestakova, Bedrich Stepanek, Jaroslav Sestak

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342976
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Gallium antimonide (GaSb) crystals were grown by the Czochralski method in a flowing hydrogen atmosphere and doped with various elements. The limit of a doping concentration of each used dopant was measured. It was shown that the lowest solubility was for S, N, Cu and the highest solubility for In, Ge, Te and As. The results are discussed and summarized in the table.

Citation Download Citation

Vera Sestakova, Bedrich Stepanek, and Jaroslav Sestak "Estimation of doping limit of some elements in GaSb single crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342976

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available