Radiation damage measurements in room-temperature semiconductor radiation detectors

Bruce Andrew Brunett; Barney L. Doyle; Larry A. Franks; Ralph B. James; Richard W. Olsen; Jacob I. Trombka; Gyorgy Vizkelethy; David S. Walsh

doi:10.1117/12.366610

19 October 1999 Radiation damage measurements in room-temperature semiconductor radiation detectors

Bruce Andrew Brunett, Barney L. Doyle, Larry A. Franks, Ralph B. James, Richard W. Olsen, Jacob I. Trombka, Gyorgy Vizkelethy, David S. Walsh

Author Affiliations +

Proceedings Volume 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics; (1999) https://doi.org/10.1117/12.366610
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide is reviewed and supplemented in the case of CZT by new alpha particle data. CZT strip detectors exposed to intermediate energy proton fluences exhibit increased interstrip leakage after 10¹⁰ p/cm² and significant bulk leakage after 10¹² p/cm². CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 X 10⁹ p/cm² in thick planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10¹⁰ n/cm², although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 X 10¹⁰ (alpha) /cm² produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 X 10⁹ (alpha) /cm².

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Bruce Andrew Brunett, Barney L. Doyle, Larry A. Franks, Ralph B. James, Richard W. Olsen, Jacob I. Trombka, Gyorgy Vizkelethy, and David S. Walsh "Radiation damage measurements in room-temperature semiconductor radiation detectors", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366610

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