Paper
10 June 1999 Photocarrier generation processes in Schottky barriers and possibilities to control the value and spectral dependence of quantum efficiency in an IR SB CCD
V. G. Ivanov, V. I. Panasenkov, G. V. Ivanov
Author Affiliations +
Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350897
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
It is shown theoretically and experimentally that the internal quantum efficiency dependence on quantum energy differs strongly from the standard dependences, described by the Fowler's theory, within the conditions of the hot electron resonance appearance. The problem of the `cooling path' increase for metal silicides and semiconductors is discussed. The advantages of recent IR SB CCDs from the technical parameter optimization standpoint are denoted.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. G. Ivanov, V. I. Panasenkov, and G. V. Ivanov "Photocarrier generation processes in Schottky barriers and possibilities to control the value and spectral dependence of quantum efficiency in an IR SB CCD", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350897
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KEYWORDS
Quantum efficiency

Charge-coupled devices

Internal quantum efficiency

Metals

Absorption

External quantum efficiency

Optical tweezers

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