Paper
10 June 1999 Recent achievements in the growth of large-size Hg1-xCdxTe single crystals with homogeneous properties
Vladimir M. Lakeenkov, N. I. Shmatov, Yu. F. Schelkin
Author Affiliations +
Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350898
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
Hg1-xCdxTe single crystals with a diameter of more than 50 mm have been grown at a constant temperature by recrystallization of preliminarily synthesized charge under the conditions of permanent melt feeding with the solid phase. This method has been mathematically modelled. The composition homogeneity and electrical and structural properties of the single crystals for different growth conditions have been studied.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir M. Lakeenkov, N. I. Shmatov, and Yu. F. Schelkin "Recent achievements in the growth of large-size Hg1-xCdxTe single crystals with homogeneous properties", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350898
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KEYWORDS
Crystals

Solids

Annealing

Mathematical modeling

Mercury

Doping

Information operations

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