Gas Immersion Laser Diffusion (GILDing)

Robert J. Pressley

doi:10.1117/12.934943

9 August 1983 Gas Immersion Laser Diffusion (GILDing)

Robert J. Pressley

Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934943
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

Gas immersion laser diffusion (GILDing) is a novel method for doping semiconductor materials directly from a dopant-containing cover gas. It takes advantage both of the rapid diffusion of the dopant into a molten semiconductor and of the rapid liquid phase epitaxial regrowth of the same semiconductor as a high quality single crystal material.

Citation Download Citation

Robert J. Pressley "Gas Immersion Laser Diffusion (GILDing)", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934943

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