Paper
8 September 1999 Ti:sapphire-laser pumped 20at%Yb:YAG thin chip with high-efficiency cw laser output of 1.053 μm
Peizhen Deng, Peizhi Yang, Wei Min Chen
Author Affiliations +
Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361187
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China
Abstract
We have developed an efficient room-temperature 20at%Yb:YAG thin chip (6 X 6 X 0.5 mm) laser operating at 1.053 micrometers pumped by Ti:Sapphire laser operating at 940 nm. 356 mW of CW output power was obtained for an absorbed pump power of 784 mW. The slope efficiency was 69%, and extrapolated threshold power is 273 mW.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peizhen Deng, Peizhi Yang, and Wei Min Chen "Ti:sapphire-laser pumped 20at%Yb:YAG thin chip with high-efficiency cw laser output of 1.053 μm", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361187
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KEYWORDS
Absorption

Crystals

Output couplers

Reflectivity

Sapphire lasers

Continuous wave operation

High power lasers

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