Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode

C. H. Hwang; Kuang-Yu Hsieh; H. S. Huang; Li-Wei Tu

doi:10.1117/12.382821

17 April 2000 Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode

C. H. Hwang, Kuang-Yu Hsieh, H. S. Huang, Li-Wei Tu

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382821
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The optical property and microstructure of InGaN/GaN MQW before and after annealed has been investigated by using photoluminescence (PL) and Transmission Electron Microscope (TEM) technique. The photoluminescence intensity of InGaN/GaN MQW LED annealed within AlN powder can be enhanced by 5 times compared with the as-grown one. The diffused Al converted the InGaN/GaN into AlGaN/InGaN. Less dislocation density in the annealed film and more carrier collection ability due to the band gap difference between InGaN/GaN and InGaN/AlGaN can be applied to explain the astonished result. This simple process can improve the optical property of GaN/InGaN QW LED without spending heavy cost in thin film growth.

Citation Download Citation

C. H. Hwang, Kuang-Yu Hsieh, H. S. Huang, and Li-Wei Tu "Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382821

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