A Two Layer Photoresist Process In A Production Environment

K. Bartlett; G. Hillis; M. Chen; R. Trutna; M. Watts

doi:10.1117/12.935121

7 November 1983 A Two Layer Photoresist Process In A Production Environment

K. Bartlett, G. Hillis, M. Chen, R. Trutna, M. Watts

Proceedings Volume 0394, Optical Microlithography II: Technology for the 1980s; (1983) https://doi.org/10.1117/12.935121
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

A manufacturable, high resolution photoresist process is described. This process was developed to increase production margins on the 1.0 μm geometries used in the Hewlett Packard NMOS III process: This was accomplished through a modification of the portable conformal mask (PCM) technique,2 which drastically reduced substrate effects on GCA. wafer stepper performance by the introduction of a bleachable dye in the bottom photoresist layer.

Citation Download Citation

K. Bartlett, G. Hillis, M. Chen, R. Trutna, and M. Watts "A Two Layer Photoresist Process In A Production Environment", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935121

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available