Paper
1 May 2000 Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates
Guilhem Almuneau, Eric M. Hall, Shigeru Nakagawa, Jin K. Kim, Larry A. Coldren
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Abstract
The characterization of 1.55 micrometer room temperature (RT) electrically pumped monolithic vertical cavity surface emitting lasers (VCSELs) on InP is reported. By combining high refractive index-contrast AlGaAsSb/AlAsSb distributed Bragg mirrors (DBRs) and Esaki-junction-based active region, these results demonstrate that VCSELs operating at 1.55 micrometer and employing a reasonable number of mirror periods can be grown in a single epitaxial step. Regarding our first results with the same type of structure, some improvements have been achieved on the threshold current density (approximately equals 1 kA/cm2), and on the voltage drop in the DBRs. We also present in this paper the thermal conductivity of the As- Sb materials measured on both bulk layers and DBR stacks. The main performance-limiting factor appears to be the combination between the low thermal conduction of the quaternary alloys lattice-matched to InP, and the high energy-band offset between the high- and the low-index materials.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guilhem Almuneau, Eric M. Hall, Shigeru Nakagawa, Jin K. Kim, and Larry A. Coldren "Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates", Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); https://doi.org/10.1117/12.384360
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KEYWORDS
Vertical cavity surface emitting lasers

Mirrors

Interfaces

Antimony

Doping

Temperature metrology

Continuous wave operation

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