Paper
27 April 2000 Integration of 32x32 photodiode arrays with silicon for massively parallel optical interconnects
Chang Myung Ryu, Bernhard Ulrich Koelle, Shane R. Johnson, Philip Dowd, Raenaurd Datrion Turpin, S. Adhiveeraraghavan, Jin Xu, YongHang Zhang, Daniel Docter
Author Affiliations +
Abstract
We demonstrated the integration of 32 by 32 p-i-n photodiode arrays with Si-dummy chips for potential use in massively parallel short-distance optical interconnects. Individual devices in 32 by 32 InGaAs/InP photodetector arrays were successfully tested and demonstrated a small signal modulation speed above 10 GHz under dark condition, corresponding to an aggregate data transmission capacity in excess of Tera-bit/s.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang Myung Ryu, Bernhard Ulrich Koelle, Shane R. Johnson, Philip Dowd, Raenaurd Datrion Turpin, S. Adhiveeraraghavan, Jin Xu, YongHang Zhang, and Daniel Docter "Integration of 32x32 photodiode arrays with silicon for massively parallel optical interconnects", Proc. SPIE 3952, Optoelectronic Interconnects VII; Photonics Packaging and Integration II, (27 April 2000); https://doi.org/10.1117/12.384389
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KEYWORDS
Photodiodes

Silicon

Metals

Optical interconnects

PIN photodiodes

Gold

Vertical cavity surface emitting lasers

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