Paper
15 March 2000 Near-infrared wavemeter based on an array of polycrystalline Ge-on-Si photodetectors
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Abstract
We report on a novel solid state wavelength meter in the near infrared. The device is an array of six photodetectors based on polycrystalline germanium film evaporated on a silicon substrate and each element is a wavelength sensitive detector. We describe the design, the fabrication and the characterization of such device and we demonstrate its capability in the measurement of the wavelength of quasi- monochromatic light beams.
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Gianlorenzo Masini, Lorenzo Colace, and Gaetano Assanto "Near-infrared wavemeter based on an array of polycrystalline Ge-on-Si photodetectors", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); https://doi.org/10.1117/12.379601
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Germanium

Photodetectors

Sensors

Near infrared

Absorption

Silicon films

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