Paper
3 February 2000 Ion projection lithography: progress in mask and tool technology
Albrecht Ehrmann, Rainer Kaesmaier, Thomas Struck
Author Affiliations +
Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377120
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
Ion Projection Lithography is one of the major competitors for sub 100 nm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology have been obtained. The exposure tool is in process of being assembled, so that information of the components as the multi-cusp ion source can be given. Results from the field-composable lens electrode manufacturing and of the off-axis alignment system are to be presented. Mask process technology has been improved by introduction of a multi-step trench etch technique. A stencil mask based on a 200 mm wafer has been produced. In addition, the repeatability values of placement and CD measurements have been decreased. Defect inspection with optical KLA tool results give information on the current limits for stencil mask applications.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albrecht Ehrmann, Rainer Kaesmaier, and Thomas Struck "Ion projection lithography: progress in mask and tool technology", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377120
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KEYWORDS
Photomasks

Electrodes

Ions

Manufacturing

Defect inspection

Pellicles

Projection lithography

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