Gel layer model for photoresist development

Joon Yeon Cho; Se-Jin Choi; Byung-Uk Kim; Jung-Moon Park; Seung Jong Lee

doi:10.1117/12.388327

23 June 2000 Gel layer model for photoresist development

Joon Yeon Cho, Se-Jin Choi, Byung-Uk Kim, Jung-Moon Park, Seung Jong Lee

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388327
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The positive photoresist is assumed to be transferred, via intermediate gel state, from the resist to the developer solution. A mechanism for the development of positive photoresist is proposed to derive a development rate equation considering gel layer formation. This new model using the concept of gel layer can better fit recent experimental dissolution rate data exhibiting a notch shape which is critical to resist performance. The model parameters are obtained by fitting measured dissolution data using the least square method. The variation of gel layer thickness during dissolution is well explained with the model.

Citation Download Citation

Joon Yeon Cho, Se-Jin Choi, Byung-Uk Kim, Jung-Moon Park, and Seung Jong Lee "Gel layer model for photoresist development", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388327

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