Unipolar semiconductor lasers on asymmetric quantum wells

Yurii Aleshchenko; Vladimir Kapaev; Yurii Kopaev

doi:10.1117/12.378147

25 February 2000 Unipolar semiconductor lasers on asymmetric quantum wells

Yurii Aleshchenko, Vladimir Kapaev, Yurii Kopaev

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378147
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

We propose the original design of an active element of quantum unipolar semiconductor laser both for the optical pumping and current injection modes of operation. The peculiarities of the posed design are strongly asymmetric barriers surrounding a double-well active element. The suppression of intersubband transitions to the lower working subband can be readily achieved if the transformation point of electronic state dimensionality for lower subband occurs at small momentum. By this means the population inversion conditions in this system can be easily realized. The results of photoluminescence studies of the individual elements of the proposed structure are presented.

Citation Download Citation

Yurii Aleshchenko, Vladimir Kapaev, and Yurii Kopaev "Unipolar semiconductor lasers on asymmetric quantum wells", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378147

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