ZnSe/Si growth by liquid phase deposition

Min Yen Yeh; Hung Ming Yen

doi:10.1117/12.392183

11 July 2000 ZnSe/Si growth by liquid phase deposition

Min Yen Yeh, Hung Ming Yen

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392183
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

ZnSe is an important semiconductor material with a large bandgap (2.68 eV), which has the potential to be used for photoluminescent and eletroluminescent devices and for window layer of solar cells. In this work, a low-cost and large-area growth method for ZnSe layer on Si substrate was studied by liquid phase deposition (LPD). The micrograph of the surface shows specula but a roughness surface texture is obtained. The island texture could be improved by raising growth temperatures. The crystallinity could be improved by the growth temperature considerations. High resistivity and specular layers were obtained as grown at room temperature. The abrupt interface resulted from less interdiffusion between ZnSe layers and substrates was reasonable under the growth condition at room temperatures.

Citation Download Citation

Min Yen Yeh and Hung Ming Yen "ZnSe/Si growth by liquid phase deposition", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392183

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available