High-performance thin film transistors using Ni silicide for liquid-crystal displays

Jin Jang; Jaiil Ryu; Kyu Sik Cho

doi:10.1117/12.389391

30 June 2000 High-performance thin film transistors using Ni silicide for liquid-crystal displays

Jin Jang, Jaiil Ryu, Kyu Sik Cho

Proceedings Volume 4079, Display Technologies III; (2000) https://doi.org/10.1117/12.389391
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The Ni-silicide of a sheet resistance of 7 (Omega) /(open square) can be formed at 230 degree(s)C on n⁺ a-Si:H and thus can be applied to gate and source/drain contacts for high performance TFTs. Because of its low resistance it is possible to make a self-alignment between gate and source/drain, which lead to a coplanar a-Si:H TFT having a low parasitic capacitance between them. The NiSi₂ precipitates can be formed on a-Si:H at around 350 degree(s)C and needlelike Si crystallites are grown as a result of the migration of the NiSi₂ precipitates though a-Si:H network. Amorphous silicon can be crystallized at 500 degree(s)C in 10 minutes in a modest electric field. The low temperature poly-Si TFT with a field effect mobility of 120 cm²/Vs has been demonstrated using the low temperature poly-Si.

Citation Download Citation

Jin Jang, Jaiil Ryu, and Kyu Sik Cho "High-performance thin film transistors using Ni silicide for liquid-crystal displays", Proc. SPIE 4079, Display Technologies III, (30 June 2000); https://doi.org/10.1117/12.389391

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