Paper
29 November 2000 Effect of structure development on self-trapped exciton emission of TiO2 thin films
Ilmo Sildos, A. Suisalu, V. Kiisk, M. Schuisky, H. Mandar, T. Uustare, Jaan Aarik
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408489
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Photoluminescence of thin crystalline TiO2 films was studied. The films contained an anatase phase and were grown by the atomic layer deposition method on different single crystal substrates. A polarized re-combination emission of self-trapped excitons was observed in the films at 5 K. A comparison of the obtained spectra with those of the single crystal anatase allowed determining crystallite orientations in the films. Results were consistent with the x-ray diffraction and reflection high-energy electron diffraction data.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilmo Sildos, A. Suisalu, V. Kiisk, M. Schuisky, H. Mandar, T. Uustare, and Jaan Aarik "Effect of structure development on self-trapped exciton emission of TiO2 thin films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408489
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KEYWORDS
Crystals

Excitons

Polarization

Thin films

Single crystal X-ray diffraction

Solar thermal energy

Atomic layer deposition

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