Paper
14 June 2000 Pulsed laser deposition of phosphor nitride thin films
Bohdan K. Kotlyarchuk, Dmytro I. Popovych
Author Affiliations +
Proceedings Volume 4148, Optoelectronic and Hybrid Optical/Digital Systems for Image and Signal Processing; (2000) https://doi.org/10.1117/12.388454
Event: International Workshop on Optoelectronic and Hybrid Optical/Digital Systems for Image/Signal Processing, 1999, Lviv, Ukraine
Abstract
In this paper we report on the results of experimental investigations of processes of pulse laser reactive deposition and structure formation and characteristics of AlN, AlN:Mn, GaN, GaN:Zn, GaN:Mn, GaN:Cr, MgSiN2:Ti, SrSiN2:Eu thin films which have been condensed from laser erosion plasma into reactive atmosphere (nitrogen).
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bohdan K. Kotlyarchuk and Dmytro I. Popovych "Pulsed laser deposition of phosphor nitride thin films", Proc. SPIE 4148, Optoelectronic and Hybrid Optical/Digital Systems for Image and Signal Processing, (14 June 2000); https://doi.org/10.1117/12.388454
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Nitrogen

Pulsed laser operation

Plasma

Pulsed laser deposition

Crystals

Gallium nitride

Thin films

Back to Top