Laser-induced structure defects and their use for modification of properties of (Cd,Hg)Te epitaxial layers end CdTe cyrstals

Apollinariy Zaginey; Bohdan K. Kotlyarchuk; Yuriy Syvenkyy

doi:10.1117/12.395743

18 August 2000 Laser-induced structure defects and their use for modification of properties of (Cd,Hg)Te epitaxial layers end CdTe cyrstals

Apollinariy Zaginey, Bohdan K. Kotlyarchuk, Yuriy Syvenkyy

Author Affiliations +

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395743
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

This paper examines the experimental researches of structure defect generation in (Cd, Hg)Te epitaxial layers on CdTe substrates and CdTe mono-crystals after pulse laser treatment and the influence of these defects on mechanical, optical and galvano-magnetic properties of the samples. In the experiments we used the ruby laser radiation with energy density changed in the range 1.5-15 J/cm². The duration of laser pulses was about 1.5 ms. Changes in the chemical composition of the irradiated surface have been analyzed by the Auger electron spectroscopy. The zones with increased defect concentration were determined by the method of the selective chemical etching. It has been determined that the pulse laser processing results in both the essential redistribution of the component concentration and generation of the point and extended defects in near-surface crystal layers excited by laser irradiation. After the laser irradiation of the samples the redistribution of the intensity of the luminescence bands and emergence of a new band were observed over the band 840 nm at the temperature of samples about 4.2 K. The essential growth of the spectral band intensity with a maximum within the band 875-885 nm at T equals K has been observed as well.

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Apollinariy Zaginey, Bohdan K. Kotlyarchuk, and Yuriy Syvenkyy "Laser-induced structure defects and their use for modification of properties of (Cd,Hg)Te epitaxial layers end CdTe cyrstals", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395743

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