Narrow-linewidth tunable external-cavity semiconductor laser with Littman setup

Jie Jin; Shuguang Guo; Fuyun Lu; Guangyin Zhang

doi:10.1117/12.401692

3 October 2000 Narrow-linewidth tunable external-cavity semiconductor laser with Littman setup

Jie Jin, Shuguang Guo, Fuyun Lu, Guangyin Zhang

Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401692
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

In this paper some results of a narrow-band tunable external- cavity semiconductor laser with the Littman set-up are reported. The laser system consists of a commercial semiconductor laser at wavelength of 803 nm, a blazed grating, and an external mirror. The output power 17.9 mW and sideband suppression ratio over 20 dB were obtained. The laser is tuned conveniently in a range greater than 10 nm. The laser is single frequency, has a narrow linewidth, and is tunable over a wide range. The laser beam has good directional stability when it is tuned.

Citation Download Citation

Jie Jin, Shuguang Guo, Fuyun Lu, and Guangyin Zhang "Narrow-linewidth tunable external-cavity semiconductor laser with Littman setup", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401692

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