Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-um range

Boris A. Matveev; Meyrhan Aydaraliev; Nonna V. Zotova; Sergey A. Karandashev; Maxim A. Remennyi; Nikolai M. Stus'; Georgii N. Talalakin; Volodymyr K. Malyutenko; Oleg Yu. Malyutenko

doi:10.1117/12.426876

17 May 2001 Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range

Boris A. Matveev, Meyrhan Aydaraliev, Nonna V. Zotova, Sergey A. Karandashev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin, Volodymyr K. Malyutenko, Oleg Yu. Malyutenko

Author Affiliations +

Proceedings Volume 4285, Testing, Reliability, and Applications of Optoelectronic Devices; (2001) https://doi.org/10.1117/12.426876
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Negative luminescence (NL) operation at ∼4 µm for p-InAsSbP/n-InAs and 4÷5 µm for p-InAsSb/n-InAsSb(P) diodes with FWHM∼0.1⋅λmax is reported for a reverse bias operation mode. NL output at 180oC is as high as 3÷5 µW and negative apparent temperature contrast is as strong as ∆T= - (6÷10°C) which show advantages of InAs and InAsSb based NL devices for high temperature applications. The remarkable feature is the uniformity of spatial NL output distribution, which is a confirmation of the existence of a potential barrier in narrow band p-n junction at elevated temperatures.

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Boris A. Matveev, Meyrhan Aydaraliev, Nonna V. Zotova, Sergey A. Karandashev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin, Volodymyr K. Malyutenko, and Oleg Yu. Malyutenko "Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range", Proc. SPIE 4285, Testing, Reliability, and Applications of Optoelectronic Devices, (17 May 2001); https://doi.org/10.1117/12.426876

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