alpha-C:H films for photonic structure fabrication

Vitoldas Kopustinskas; Viktoras Grigaliunas; Dalius Jucius; Sarunas Meskinis; Mindaugas Margelevicius; Rolandas Tomasiunas

doi:10.1117/12.417614

8 March 2001 alpha-C:H films for photonic structure fabrication

Vitoldas Kopustinskas, Viktoras Grigaliunas, Dalius Jucius, Sarunas Meskinis, Mindaugas Margelevicius, Rolandas Tomasiunas

Author Affiliations +

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417614
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

(alpha) -C:H films were applied to fabricate photonic band gap (PBG) structures in the silicon substrate by SF₆N₂-based reactive ion etching (RIE). The influence of RIE parameters on (alpha) C:H films structure and etching rate was investigated int his study. It is shown that RIE rate for (alpha) -C:H films changes from 26 nm/min to 38 nm/min with the integrated intensity ratios I_D/I_G varied from 0.65 to 1.1. It is evident that increase in etching rate is determined by increasing quantity of sp² bonding in the synthesized (alpha) -C:H films. RIE does not change structure of the (alpha) -C:H masking films. However, non- uniform character of RIE takes place due to the non- homogeneous graphite clusters in (alpha) -C:H masking films. However, non-uniform character of RIE takes place due to the non-homogeneous graphite clusters in (alpha) -C:H masking films. By changing parameters of silicon etching, such as RF power density, pressure and negative bias voltage, anisotropy was varied in wide range and microstructures of different shape were obtained.

Citation Download Citation

Vitoldas Kopustinskas, Viktoras Grigaliunas, Dalius Jucius, Sarunas Meskinis, Mindaugas Margelevicius, and Rolandas Tomasiunas "alpha-C:H films for photonic structure fabrication", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417614

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