Thick film odor sensor with (gamma)-Fe2O3 semiconductor oxide

Gabriela Telipan

doi:10.1117/12.435538

6 August 2001 Thick film odor sensor with γ-Fe₂O₃ semiconductor oxide

Gabriela Telipan

Proceedings Volume 4328, Smart Structures and Materials 2001: Sensory Phenomena and Measurement Instrumentation for Smart Structures and Materials; (2001) https://doi.org/10.1117/12.435538
Event: SPIE's 8th Annual International Symposium on Smart Structures and Materials, 2001, Newport Beach, CA, United States

Abstract

(gamma) -Fe₂O₃ is a n-type semiconductor oxide and it has been extensively studied as a gas sensing material. It is usually obtained by oxidizing Fe₃O₄ at 250 degree(s)C, temperature confirmed by the DTA curve. (gamma) -Fe₂O₃ has a spinel type crystal structure with a lattice parameter of 8,3 angstroms.

Citation Download Citation

Gabriela Telipan "Thick film odor sensor with γ-Fe₂O₃ semiconductor oxide", Proc. SPIE 4328, Smart Structures and Materials 2001: Sensory Phenomena and Measurement Instrumentation for Smart Structures and Materials, (6 August 2001); https://doi.org/10.1117/12.435538

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