Paper
20 August 2001 Essential reduction of stitching errors in electron-beam lithography using a multiple-exposure technique
Ralf Steingrueber, Herbert Engel, Werner Lessle
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Abstract
Electron-beam lithography is the technique of choice to generate in a flexible and accurate way structures and components in the micrometer region and below. Due to its particular exposure strategy, i.e. matching equidistant subfields to a complete pattern, electron-beam systems show typical displacement effects known as stitching errors. These errors can be of dramatic disturbance if they occur in high resolution patterns. This paper presents an exposure scheme which essentially reduces stitching errors by using a multiple exposure technique. The influence of this technique on the value of stitching errors and its interference with the process window as well as total processing time is reported.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralf Steingrueber, Herbert Engel, and Werner Lessle "Essential reduction of stitching errors in electron-beam lithography using a multiple-exposure technique", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436669
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Lithography

Binary data

Monochromatic aberrations

Photography

Raster graphics

Scanning electron microscopy

Standards development

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