CD monitoring of critical photo layers in 6-in. GaAs IC process

Ying Liu; Iain Black; Kezhou Xie

doi:10.1117/12.436803

22 August 2001 CD monitoring of critical photo layers in 6-in. GaAs IC process

Ying Liu, Iain Black, Kezhou Xie

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436803
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

In this study, a calibration was conducted on an IVS120 optical CD tool (Schlumberger) to define the measurement accuracy for the photo layers in MESFET and HBT processes. Feature sizes varied form 0.85 to 6.0(mu) and the resist film thickness between 0.9 ~ 4.3 micron. It is a challenging task to measure a thickfilm resist feature with a Coke Bottle/T shaped sidewall profile. Various sidewall profiles and the correlated focus/measurement algorithms were studied, especially for the 4(mu) thick HBT implant mask layers. Then a gauge repeatability and reproducibility (GRR) studies were conducted for the IVS120 data after matching to CD SEM to insure the precision of the CD measurements. As a result of this work, the correlation coefficients obtained between multiple runs of measurements were greater than 0.99 on both the reference CD SEM and the IVS120 tool. Standard deviation (3 sigma) was within the specification of the CD tool (1% or 15nm whichever is greater), and approximately 98% maintained within 0.01 micron. Overall GRR was as low as 5-8% in the selected layers and CD ranges.

Citation Download Citation

Ying Liu, Iain Black, and Kezhou Xie "CD monitoring of critical photo layers in 6-in. GaAs IC process", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436803

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