Chemical mechanical planarization process induced within lot overlay variation in 0.20-um DRAM: solution and simulation model

Chih-Ping Chen; Brian Huang; Wilson Lee; Wen-Jye Chung; Holden T.K. Hou

doi:10.1117/12.436731

22 August 2001 Chemical mechanical planarization process induced within lot overlay variation in 0.20-μm DRAM: solution and simulation model

Chih-Ping Chen, Brian Huang, Wilson Lee, Wen-Jye Chung, Holden T.K. Hou

Author Affiliations +

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436731
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

This study assesses the effectiveness of applying zero and non-zero alignment strategies to backend layers of a 0.20 micrometers DRAM process using two alignment methodology (TTL, Through the Lens Alignment, and Athena, Advanced Technology using High-Order Enhancement of Alignment) to investigate alignment mark deformation resulting from a chemical- mechanical planarization (CMP) process and thus compensate the deformation-induced overlay errors. Additionally, a mathematical model is proposed to verify that the intra and inter registration errors in TTL alignment originates from non-zero mark deformation. Several parameters in the CMP process, including pad rotation direction and pad life time are also examined to reduce the deformation-induced overlay errors. Results in this study demonstrate the effectiveness of this approach for tight and correctable compensation within whole lots, thereby demonstrating the optimal combinations of the CMP process parameters, types of alignment marks, and corresponding alignment positions.

Citation Download Citation

Chih-Ping Chen, Brian Huang, Wilson Lee, Wen-Jye Chung, and Holden T.K. Hou "Chemical mechanical planarization process induced within lot overlay variation in 0.20-μm DRAM: solution and simulation model", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436731

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available