Using pattern quality confirmation to control a metal-level DUV process with a top-down CD-SEM

Chien-Sung Liang; Haiqing Zhou; Mark A. Boehm; Ricky A. Jackson; Chih-Yu Wang; Michael D. Slessor

doi:10.1117/12.436727

22 August 2001 Using pattern quality confirmation to control a metal-level DUV process with a top-down CD-SEM

Chien-Sung Liang, Haiqing Zhou, Mark A. Boehm, Ricky A. Jackson, Chih-Yu Wang, Michael D. Slessor

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436727
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

As critical-feature patterning processes increase in complexity and sensitivity, conventional critical dimension (CD) measurements may not afford the level of process control required for effective device production. By comparing recorded top-down scanning-electron-microscope (SEM) images to a predefined reference image, Pattern Quality Confirmation (pQC) enables a more detailed analysis of measurements captured by KLA-Tencor 8XXX series scanning-electron microscopes. An example of the utility of this additional information is discussed below for a metal interconnect level patterned with a conventional deep-ultraviolet (DUV) photolithography process. In particular, we demonstrate that for certain ranges of focus-exposure conditions, conventional post-develop CD measurements remain well within specification, however, when etched, the resulting metal-line CDs are significantly below the lower specification limit. The pQC image analysis results, however, predict the observed post-etch CD variations, and consequently offer sensitivity to yield-limiting focus drifts and excursions, enabling effective product-dispositioning (rework) decisions.

Citation Download Citation

Chien-Sung Liang, Haiqing Zhou, Mark A. Boehm, Ricky A. Jackson, Chih-Yu Wang, and Michael D. Slessor "Using pattern quality confirmation to control a metal-level DUV process with a top-down CD-SEM", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436727

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Deep ultraviolet

Scanning electron microscopy

Photoresist materials

Optical lithography

Cadmium

Etching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years