Paper
24 August 2001 ArF negative resist system using androsterone structure with δ-hydroxy acid for 100-nm phase shifting lithography
Yoshiyuki Yokoyama, Takashi Hattori, Kaori Kimura, Toshihiko P. Tanaka, Hiroshi Shiraishi
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Abstract
A negative resist system utilizing acid-catalyzed intramolecular esterification of (delta) -hydroxy acid has been developed for ArF phase-shifting lithography. The system is made up of an acrylate polymer with pendant structure of androsterone derivative with (delta) -hydroxy acid and a photo-acid generator. We investigated the effect of the comonomer and found that it changes the affinity of the resist polymer to the aqueous base developer. The change of the polarity of the comonomer was found to drastically affect the dissolution properties and the resolution capability. Optimization of the (delta) -hydroxy acid content and the developer concentration prevented pattern deformation such as winding lines and scum between the lines. The improved resist formulation combined with an ArF excimer-laser stepper with a phase-shifting mask produced a clearly resolved 100-nm line-and-space patterns.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyuki Yokoyama, Takashi Hattori, Kaori Kimura, Toshihiko P. Tanaka, and Hiroshi Shiraishi "ArF negative resist system using androsterone structure with δ-hydroxy acid for 100-nm phase shifting lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436901
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Cited by 3 scholarly publications and 5 patents.
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KEYWORDS
Polymers

Lithography

Phase shifts

Photomasks

Distortion

Phase shifting

Photography

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