Paper
24 August 2001 Dependence of resist profile on exposed area ratio
Author Affiliations +
Abstract
We investigated resist profile dependence on Exposed Area Ratio (EAR). Using high activation type chemically amplified positive resist, profile changed from T-top to rounded profile with increasing EAR. We thought that this profile change was caused by acid evaporation and re- sticking. To estimate the effect of re-sticking acid, we performed resist sandwich tests. We measured resist thickness loss after PEB and observed resist profile change caused by re-sticking acid. The results thereby obtained suggest the model we propose. To reduce acid evaporation and re-sticking, we tried to use an overcoat layer. The overcoat layer was found to reduce acid evaporation and be useful for reducing resist profile dependence on EAR.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eishi Shiobara, Daisuke Kawamura, Kentaro Matsunaga, and Yasunobu Onishi "Dependence of resist profile on exposed area ratio", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436896
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ear

Semiconducting wafers

Photomasks

Photoresist processing

Lithography

Critical dimension metrology

Image processing

Back to Top