Paper
24 August 2001 Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography
Yasunori Uetani, Kazuhiko Hashimoto, Yoshiko Miya, Isao Yoshida, Mikio Takigawa, Ryotaro Hanawa
Author Affiliations +
Abstract
We reported the novel copolymer system containing fluorine atom with hydroxystyrene (HST) and 3-(perfluoro-3- methylbutyl)-2-hydroxypropyl methacrylate (MBHPMA). Using the copolymer, melamine crosslinker and PAG, negative resist was formulated. Transmittance of the resist film was 35% at 0.1micrometers thickness. High contrast negative pattern was obtained by F2 excimer laser exposure. Dry-etching resistance of the resist was comparative to novolak type i- line resist.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunori Uetani, Kazuhiko Hashimoto, Yoshiko Miya, Isao Yoshida, Mikio Takigawa, and Ryotaro Hanawa "Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436869
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Cited by 8 scholarly publications and 2 patents.
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KEYWORDS
Transmittance

Fluorine

Chemical species

Semiconducting wafers

Resistance

Lithography

Optical testing

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