Transparent resins for 157-nm lithography

Ralph R. Dammel; Raj Sakamuri; Andrew R. Romano; Richard Vicari; Cheryl Hacker; Will Conley; Daniel A. Miller

doi:10.1117/12.436865

24 August 2001 Transparent resins for 157-nm lithography

Ralph R. Dammel, Raj Sakamuri, Andrew R. Romano, Richard Vicari, Cheryl Hacker, Will Conley, Daniel A. Miller

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436865
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The development of sufficiently transparent resin systems is one of the key elements required for a successful and timely introduction for 157 nm lithography. This paper reports on the Simple Transmission Understanding and Prediction by Incremental Dilution (STUPID) model, a quick back-of-the-envelope increment scheme to estimate the absorption of polymers at 157 nm. A number of promising candidate resins based on norbornenes are discussed, and results with a first 157 nm resin system developed at the University of Austin are presented. The new system is based on copolymers of norbornene-5-methylenehexafluoroisopropanol (NMHFA) and t-butyl norbornene carboxylate (BNC), formulated with an acetal additive obtained by copolymerization of t-butyl norbornene-5-trifluoromethyl-5-carboxylate (BNTC) with carbon monoxide. Lithographic performance of this system extends to 110 nm dense features using standard illumination and a binary mask, or 80 nm semi-dense and 60 nm isolated features with a strong phase shift mask. The dry etch resistance of this resist is found to be slightly lower than APEX-E DUV resist for polysilicon but superior to it for oxide etches.

Citation Download Citation

Ralph R. Dammel, Raj Sakamuri, Andrew R. Romano, Richard Vicari, Cheryl Hacker, Will Conley, and Daniel A. Miller "Transparent resins for 157-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436865

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available