Paper
14 September 2001 Statistical method for influence of exposure and focus error on CD variation
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Abstract
Lithographic process fluctuations are treated as statistical values and reduced to effective exposure and focus error. The distribution function of CD is derived in the analytical formula in order to calculate CD yield which is important to device characteristics. The process fluctuations are represented as a summation of mean value for interval of process control and deviation from the mean value. New process window for the mean values is proposed using the CD yield. The process window expands when the frequency of process control increases. Quantitative evaluation is performed under the allowable CD yield.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shoji Mimotogi "Statistical method for influence of exposure and focus error on CD variation", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435730
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CITATIONS
Cited by 2 scholarly publications and 2 patents.
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KEYWORDS
Critical dimension metrology

Error analysis

Process control

Lithography

Statistical methods

Statistical analysis

Error control coding

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