Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

Vladimir S. Kharlamov; Boris J. Ber; Yuri V. Trushin; Evgeni E. Zhurkin; Alexei P. Kovarski; Alexander A. Schmidt

doi:10.1117/12.417661

1 February 2001 Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

Vladimir S. Kharlamov, Boris J. Ber, Yuri V. Trushin, Evgeni E. Zhurkin, Alexei P. Kovarski, Alexander A. Schmidt

Author Affiliations +

Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417661
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation

Abstract

The combined experimental and computer simulation technique for the estimation of the displacement threshold energies of impurity atoms in materials has been developed. The technique is based on SIMS sputtering profiling of structures with thin impurity marker layers and computer simulation of this process. Using this technique the displacement threshold energies of Al atoms in GaAs matrix and Sb atoms in Si matrix have been estimated.

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Vladimir S. Kharlamov, Boris J. Ber, Yuri V. Trushin, Evgeni E. Zhurkin, Alexei P. Kovarski, and Alexander A. Schmidt "Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417661

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