Paper
22 February 2001 CdTe substrate purification from impurities by gettering
Leonid A. Kosyachenko, Z. I. Zakharuk, A. I. Rarenko, E. S. Nykonyuk
Author Affiliations +
Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417793
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
A possibility of CdTe substrate purification from impurities by structure-breakdown layer gettering, formed by laser irradiation, is considered. For profile calculation of diffusive distribution of point defects during heat treatment, and also substrate purification degree after heat treatment, a model, based on diffusion equation with consideration of impurity absorption by dislocations, is proposed. Impurity redistribution task in structure CdTe-CdHgTe during annealing is solved also. Investigations, carried out on specially prepared samples, confirmed CdTe purification effectiveness by gettering: impurity concentration decreased in 5 - 10 times.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonid A. Kosyachenko, Z. I. Zakharuk, A. I. Rarenko, and E. S. Nykonyuk "CdTe substrate purification from impurities by gettering", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417793
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KEYWORDS
Diffusion

Heat treatments

Annealing

Laser irradiation

Absorption

Cadmium

Crystals

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