Paper
22 February 2001 Photoluminescence in complex microporous-macroporous silicon structures
Lyudmila A. Karachevtseva, Oleq A. Lytvynenko, Yoshio Fukuda, Kazuo Furuya
Author Affiliations +
Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417775
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Photoluminescence (PL) in complex micropore-macropore silicon structures consisted of 100 - 700 nm micropore layers on macropore walls have been studied. Scanning electron microscopy observations and Fourier transform infrared spectroscopy results have been performed to identify structure and local chemical states. For higher current densities during pore formation the intensity of orange PL peaking near 600 nm decreased, and the PL lifetime was grown. The blue PL shift was observed due to reduction of Si nanoparticle sizes, and micropore-macropore structures showed the lower PL intensity dealing with the small hydride concentration and thin microporous layers. Obtained results suggest arising of orange PL from microporous layers on the macropore walls that widened optoelectronic functions of two-dimensional macroporous silicon structures.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lyudmila A. Karachevtseva, Oleq A. Lytvynenko, Yoshio Fukuda, and Kazuo Furuya "Photoluminescence in complex microporous-macroporous silicon structures", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417775
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KEYWORDS
Silicon

Scanning electron microscopy

Luminescence

FT-IR spectroscopy

Surface finishing

Nickel

System on a chip

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