Paper
7 March 2001 Deposition and measurements of antireflection coatings for semiconductor lasers
Josef Lazar, Pavel Pokorny
Author Affiliations +
Proceedings Volume 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; (2001) https://doi.org/10.1117/12.417844
Event: 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2000, Velke Losiny, Czech Republic
Abstract
We present experimental results obtained by deposition of single layer and double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 635-633 nm laser diodes emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a 'modulation depth' of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatability of the deposition process in a range not exceeding 2 by 10-4.
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Josef Lazar and Pavel Pokorny "Deposition and measurements of antireflection coatings for semiconductor lasers", Proc. SPIE 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (7 March 2001); https://doi.org/10.1117/12.417844
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KEYWORDS
Semiconductor lasers

Reflectivity

Diodes

Antireflective coatings

Information operations

Deposition processes

Refraction

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