Paper
10 October 2001 QWIPs beyond FPAs: high-speed room-temperature detectors
Hui Chun Liu, Richard Dudek, Aidong Shen, Emmanuel Dupont, Chunying Song, Zbigniew R. Wasilewski, Margaret Buchanan
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Abstract
Quantum wells, especially those made of GaAs and InP related compounds, have enabled several unique infrared devices. A very successful example is the quantum well infrared photodetector (QWIP). Thermal imaging using focal plane arrays (FPAs) based on QWIPs is the main established existing application. In a different direction, the intrinsic short carrier lifetime (approximately 5 ps) makes the QWIP well suited for high speed and high frequency applications. In such cases, since lasers are commonly used, a high dark current can be tolerated. The most important parameter is then the absorption efficiency. For system simplicity and potential wide use, near room temperature operation is desirable. An optimization study is carried out and reported here, using GaAs/AlGaAs QWIP structures. High absorption (approximately 100%) and up to room temperature operation are achieved in devices having high doping densities and 100 quantum wells.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Chun Liu, Richard Dudek, Aidong Shen, Emmanuel Dupont, Chunying Song, Zbigniew R. Wasilewski, and Margaret Buchanan "QWIPs beyond FPAs: high-speed room-temperature detectors", Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); https://doi.org/10.1117/12.445339
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KEYWORDS
Quantum well infrared photodetectors

Doping

Absorption

Sensors

Quantum wells

Thermography

Gallium arsenide

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