Paper
9 April 2001 Laser-induced photodarkening and photobleaching in Ge-As-S thin films
Evgenia R. Skordeva, Darina Arsova, Zdravka I. Aneva, Nikolay K. Vuchkov, Dimo N. Astadjov
Author Affiliations +
Proceedings Volume 4397, 11th International School on Quantum Electronics: Laser Physics and Applications; (2001) https://doi.org/10.1117/12.425163
Event: 11th International School on Quantum Electronics: Laser Physics and Applications, 2000, Varna, Bulgaria
Abstract
Photoinduced changes in the structure of amorphous chalcogenide films reflect in their optical transmission as photodarkening (PD) or photobleaching (PB). As a rule As- chalcogenides photodarken while Ge-chalcogenides photobleach when illuminated by band-gap light. Our previous investigations have shown that in GexAs40-xS60 films PD and PB depend on the prevalence of the As- or Ge- content, respectively. In the present work we show for the first time that the appearance of PB or PD in the Ge-As-S films depends not only on the composition, but also on the characteristics of the irradiation source. Pulsed and CW lasers as well as HBO 500 lamp were used to specify the necessary experimental conditions. Possible explanations of the differences in the light effects are discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgenia R. Skordeva, Darina Arsova, Zdravka I. Aneva, Nikolay K. Vuchkov, and Dimo N. Astadjov "Laser-induced photodarkening and photobleaching in Ge-As-S thin films", Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); https://doi.org/10.1117/12.425163
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Cited by 3 scholarly publications.
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KEYWORDS
Thin films

Laser irradiation

Transmittance

Lamps

Continuous wave operation

Chalcogenides

Germanium

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